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RLP1N06CLE - N-Channel Power MOSFET

Features

  • 1A, 55V.
  • rDS(ON) = 0.750Ω.
  • ILIMIT at 150oC = 1.1A to 1.5A Maximum.
  • Built-in Voltage Clamp.
  • Built-in Current Limiting.
  • ESD Protected, 2kV Minimum.
  • Controlled Switching Limits EMI and RFI.
  • 175oC Rated Junction Temperature.
  • Logic Level Gate.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RLP1N06CLE.

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Full PDF Text Transcription

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RLP1N06CLE Data Sheet July 1999 File Number 2839.4 1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET The RLP1N06CLE is an intelligent monolithic power circuit which incorporates a lateral bipolar transistor, resistors, zener diodes, and a PowerMOS transistor. The current limiting of this device allows it to be used safely in circuits where it is anticipated that a shorted load condition may be encountered. The drain to source voltage clamping offers precision control of the circuit voltage when switching inductive loads. Logic level gates allow this device to be fully biased on with only 5V from gate to source. Input protection is provided for ESD up to 2kV. Formerly developmental type TA09880. Features • 1A, 55V • rDS(ON) = 0.750Ω • ILIMIT at 150oC = 1.
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