Datasheet4U Logo Datasheet4U.com

RFV10N50BE - 10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Description

The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers.

The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes.

Features

  • 10A, 500V.
  • rDS(ON) = 0.480Ω.
  • Very Fast Turn-Off Characteristics.
  • Nanosecond Switching Speeds.
  • Electrostatic Discharge Protected.
  • UIS Rating Curve.
  • SOA is Power Dissipation Limited.
  • High Input Impedance.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RFV12TG6S Super Fast Recovery Diode Rohm
RFV12TJ6S Super Fast Recovery Diode Rohm
RFV15TG6S Super Fast Recovery Diode Rohm
RFV15TJ6S Super Fast Recovery Diode Rohm
RFV300 3.3V LV-PECL VCXO Fox Electronics

Other Datasheets by Intersil (Renesas)

Part Number Description
RFV10N50 10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription

Click to expand full text
S E M I C O N D U C T O R RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs Package JEDEC STYLE 5 LEAD TO-247 August 1995 Features • 10A, 500V • rDS(ON) = 0.480Ω • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds • Electrostatic Discharge Protected • UIS Rating Curve • SOA is Power Dissipation Limited • High Input Impedance Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1).
Published: |