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RFT1P06E - 1.4A/ 60V/ 0.285 Ohm/ ESD Rated/ P-Channel Power MOSFET

Features

  • 1.4A, 60V.
  • rDS(ON) = 0.285Ω.
  • 2kV ESD Protected.
  • Temperature Compensating PSPICE® Model.
  • SPICE Thermal Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 150oC Operating Temperature.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFT1P06E.

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Part Number Description
RFT2P03L 2.1A/ 30V/ 0.150 Ohm/ P-Channel Logic Level/ Power MOSFET
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Full PDF Text Transcription

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RFT1P06E Data Sheet August 1999 File Number 4495.1 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49044. Features • 1.4A, 60V • rDS(ON) = 0.
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