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RFM7N40 - N-Channel Power MOSFET

Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

  • 7A, 350V and 400V.
  • rDS(ON) = 0.75Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFM7N35 RFM7N40 RFP7N35 RFP7N40.

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Full PDF Text Transcription (Reference)

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Semiconductor RFM7N35, RFM7N40, RFP7N35, RFP7N40 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17424. July 1998 Features • 7A, 350V and 400V • rDS(ON) = 0.
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