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RFM4N35 - N-Channel Power MOSFET

Features

  • 4A, 350V and 400V.
  • rDS(ON) = 2.000Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ [ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect transistors designed for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs Features • 4A, 350V and 400V • rDS(ON) = 2.000Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ [ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect transistors designed for applications such 35, as switching regulators, switching converters, motor drivers, /Subrelay drivers, and drivers for high power bipolar switching RFM4N ject () 40, /Autho transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated RFP4N3 r () circuits. 5, /KeyRFP4N4 Formerly developmental type TA17404.
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