Datasheet4U Logo Datasheet4U.com

RFM3N50 - N-Channel Power MOSFET

Features

  • 3A, 450V and 500V.
  • rDS(ON) = 3Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title () /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark Symbol D Ordering Information PART NUMBER RFM3N45 RFM3N50 RFP3N45 RFP3N50.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RFM31B ISM RECEIVER HOPERF
RFM-0505S DC/DC Converter RECOM
RFM-07088 One Chip FM Receiver RF
RFM01 ISM Band FSK Receiver Module Hope RF
RFM01 Universal ISM Band FSK Receiver HOPERF

Other Datasheets by Intersil (Renesas)

Part Number Description
RFM3N45 N-Channel Power MOSFET
RFM10N45 N-Channel Power MOSFET
RFM10N50 N-Channel Power MOSFET
RFM12N08 N-Channel Power MOSFET
RFM12N10 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RFM3N45, RFM3N50, RFP3N45, RFP3N50 Semiconductor Data Sheet October 1998 File Number 1384.2 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405.
Published: |