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RF340 - 10A/ 400V/ 0.550 Ohm/ N-Channel Power MOSFET

Features

  • 10A, 400V.
  • rDS(ON) = 0.550Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF340.

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Full PDF Text Transcription (Reference)

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IRF340 Data Sheet March 1999 File Number 2307.3 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specific level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17424. Features • 10A, 400V • rDS(ON) = 0.
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