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RF1S45N03LSM - 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs

Description

These are N-Channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 45A, 30V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M) /Subject (45A, 30V, 0.022 Ohm, Symbol D Ordering Information PART NUMBER R.

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Other Datasheets by Intersil (Renesas)

Part Number Description
RF1S45N03L 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs
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Semiconductor RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49030. September 1998 Features • 45A, 30V • rDS(ON) = 0.
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