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RF1S42N03LSM - 42A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFET

Features

  • 42A, 30V.
  • rDS(ON) = 0.025Ω.
  • Temperature Compensating PSPICE® Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP42N03L RF1S42N03LSM.

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Full PDF Text Transcription

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RFP42N03L, RF1S42N03LSM Data Sheet July 1999 File Number 4302.2 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49030. Features • 42A, 30V • rDS(ON) = 0.
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