Datasheet4U Logo Datasheet4U.com

JANSR2N7440 - Formerly Available as FSS913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs

Key Features

  • 10A, -100V, rDS(ON) = 0.280Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 1.5nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Sp.

📥 Download Datasheet

Datasheet Details

Part number JANSR2N7440
Manufacturer Intersil (now Renesas)
File Size 71.55 KB
Description Formerly Available as FSS913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
Datasheet download datasheet JANSR2N7440 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
JANSR2N7423 RADIATION HARDENED POWER MOSFET IRF
JANSR2N7425 POWER MOSFET International Rectifier
JANSR2N7432 Radiation Hardened Power MOSFET International Rectifier
JANSR2N7470T1 RADIATION HARDENED POWER MOSFET International Rectifier
JANSR2N7471T1 RADIATION HARDENED POWER MOSFET International Rectifier

Other Datasheets by Intersil (now Renesas)

Part Number Description
JANSR2N7400 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7401 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7402 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7403 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET
JANSR2N7404 15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
JANSR2N7440 Data Sheet November 1999 File Number 4803 Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.