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ITF87072DK8T - 6A/ 20V/ 0.037 Ohm/ Dual P-Channel/ 2.5V Specified Power MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS =.
  • 4.5V - rDS(ON) = 0.039Ω, VGS =.
  • 4.0V - rDS(ON) = 0.059Ω, VGS =.
  • 2.5V.
  • Gate to Source Protection Diode.
  • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www. intersil. com.
  • Peak Current vs Pulse Width Curve.
  • Transient Thermal Impedance Curve vs Board Mounting Area 5 1 2 3 4 Symbol DRAIN1(8) DRAIN1(7) SO.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ITF87072DK8T TM Data Sheet March 2000 File Number 4812.3 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 (JEDEC MS-012AA) BRANDING DASH Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V - rDS(ON) = 0.059Ω, VGS = −2.5V • Gate to Source Protection Diode • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.