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HS9-2100RH-8 - Radiation Hardened High Frequency Half Bridge Driver

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • Electrically Screened to DESC SMD # 5962-99536.
  • QML Qualified per MIL-PRF-38535 Requirements.
  • Radiation Environment - Maximum Total Dose.
  • . . . . 3 x 105 RAD(SI) - DI RSG Process Provides Latch-up Immunity - Vertical Architecture Provides Low Dose Rate Immunity.
  • Bootstrap Supply Max Voltage to 120V.
  • Drives 1000pF Load at 1MHz with Rise and Fall Times of 45ns (Typ).
  • 1A (Typ) Peak Output Current.
  • Independent Inputs for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HS-2100RH Data Sheet June 1999 File Number 4562.3 Radiation Hardened High Frequency Half Bridge Driver The Radiation Hardened HS-2100RH is a high frequency, 100V Half Bridge N-Channel MOSFET Driver IC, which is a functional, pin-to-pin replacement for the Intersil HIP2500 and the industry standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead-time selection and driver protocol. In addition, the device has on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from SEUs.
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