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HGTP10N40F1D, HGTP10N50F1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
• 10A, 400V and 500V • Latch Free Operation • Typical Fall Time < 1.4µs • High Input Impedance • Low Conduction Loss • Anti-Parallel Diode • tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.
HGTP10N50F1D Datasheet
