Datasheet4U Logo Datasheet4U.com

HGT1S1N120CNDS - N-Channel IGBT

Features

  • of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high voltage switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HGT1S10N120BNS 35A/ 1200V/ NPT Series N-Channel IGBT Fairchild Semiconductor
HGT1S11N120CNS N-Channel IGBT Fairchild Semiconductor
HGT1S12N60A4DS N-Channel IGBT Fairchild Semiconductor
HGT1S12N60A4DS N-Channel IGBT ON Semiconductor
HGT1S12N60A4S9A N-Channel IGBT Fairchild Semiconductor

Other Datasheets by Intersil (Renesas)

Part Number Description
HGT1S1N120BNDS N-Channel IGBT
HGT1S10N120BNS N-Channel IGBT
HGT1S11N120CNS N-Channel IGBT
HGT1S12N60A4DS N-Channel IGBT
HGT1S12N60A4S N-Channel IGBT

Full PDF Text Transcription

Click to expand full text
HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 File Number 4651.1 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).
Published: |