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FSYE913A0D - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

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Intersil Corporation

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FSYE913A0D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs by Intersil Corporation - Datasheet Preview — Datasheet preview – FSYE913A0D

Datasheet Details

Part number	FSYE913A0D
Manufacturer	Intersil Corporation
File Size	70.29 KB
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Datasheet	FSYE913A0D Datasheet
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Features

6A, -200V, rDS(ON) = 0.650Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 3.0nA Per-RAD (Si)/s Typically.
Neutron - Maintain Pre-RAD Sp.

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Published: Mar 23, 2005 |