FSS234R - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Product Overview

Intersil Corporation

Datasheet Details

Part number	FSS234R
Manufacturer	Intersil Corporation
File Size	45.40 KB
Description	6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Datasheet	FSS234R Datasheet
Additional preview pages of the FSS234R datasheet.

Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Features

6A, 250V, rDS(ON) = 0.600Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 4.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

📁 Similar Datasheet

FSS234 - N-Channel Silicon MOSFET (Sanyo)
FSS232 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
FSS238 - Load Switching Applications (Sanyo Semicon Device)
FSS207 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
FSS212 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
FSS216 - DC/DC Converter Applications (Sanyo Semicon Device)
FSS242 - DC/DC Converter Applications (Sanyo Semicon Device)
FSS244 - DC / DC Converter Applications (Sanyo Semicon Device)

Other Datasheets by Intersil Corporation

FSS234D - N-Channel Power MOSFETs
FSS230D - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSS230R - N-Channel Power MOSFETs
FSS23A0D - N-Channel Power MOSFETs
FSS23A0R - 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSS23A4D - 7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Published: Mar 23, 2005 |