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DG182AA - High-Speed Drivers with JFET Switch

General Description

The DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors (JFET) designed to function as electronic switches.

Level-shifting drivers enable low-level inputs (0.8V to 2V) to control the ON-OFF state of each switch.

Key Features

  • DG 90: DG 043, HI DG1 91: HI-5.
  • Constant ON-Resistance for Signals to ±10V (DG182, DG1 DG185, DG188, DG191), to ±7.5V (All Devices).
  • ±15V Power Supplies.

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📁 Similar Datasheet

Part Number Description Manufacturer
DG182 High-Speed Drivers with Dual SPST JFET Switches Vishay Siliconix

Other Datasheets by Intersil (now Renesas)

Part Number Description
DG182AP High-Speed Drivers with JFET Switch
DG182BA High-Speed Drivers with JFET Switch
DG182BP High-Speed Drivers with JFET Switch
DG181 High-Speed Drivers with JFET Switch
DG184AP High-Speed Drivers with JFET Switch
DG184BP High-Speed Drivers with JFET Switch
DG185AP High-Speed Drivers with JFET Switch
DG185BP High-Speed Drivers with JFET Switch
DG187AA High-Speed Drivers with JFET Switch
DG187AP High-Speed Drivers with JFET Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor DG181 thru DG191 High-Speed Drivers with JFET Switch Description The DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors (JFET) designed to function as electronic switches. Level-shifting drivers enable low-level inputs (0.8V to 2V) to control the ON-OFF state of each switch. The driver is designed to provide a turn-off speed which is faster than turn-on speed, so that break-before-make action is achieved when switching from one channel to another. In the ON state, each switch conducts current equally well in both directions. In the OFF condition, the switches will block voltages up to 20V peak-to-peak. Switch-OFF input-output isolation 50dB at 10MHz, due to the low output impedance of the FET-gate driving circuit.