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ACTS10MS Datasheet Radiation Hardened Triple Three-Input NAND Gate

Manufacturer: Intersil (now Renesas)

Overview: ACTS10MS April 1995 Radiation Hardened Triple Three-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 A2 3 B2 4 C2 5 Y2 6 GND 7 14 VCC 13 C1 12 Y1.

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General Description

The Intersil ACTS10MS is a radiation hardened triple three-input NAND gate.

A high on all inputs forces the output to a low state.

The ACTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Total Dose 300K RAD (Si).
  • Single Event Upset (SEU) Immunity 80 MEV-cm2/mg.
  • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to ALSTTL Logic.
  • DC Operating Voltage Range: 4.5V to 5.5V.
  • Input Logic Levels.

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