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ACS10MS - Radiation Hardened Triple Three-Input NAND Gate

General Description

The Intersil ACS10MS is a radiation hardened triple three-input NAND gate.

A high on all inputs forces the output to a low state.

The ACS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Total Dose 300K RAD (Si).
  • Single Event Upset (SEU) Immunity 80.
  • Dose Rate Upset >1011 MEV-cm2 /mg RAD (Si)/s, 20ns Pulse -55oC +125oC.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: to C2 5 Y2 6 GND 7.
  • Significant Power Reduction Compared to ALSTTL Logic.
  • DC Operating Voltage Range: 4.5V to 5.5V.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
ACS109MS Radiation Hardened Dual J-K Flip-Flop
ACS112MS Radiation Hardened Dual J-K Flip-Flop
ACS11MS Radiation Hardened Triple 3-Input AND Gate
ACS125MS Radiation Hardened Quad Buffer
ACS132MS Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACS10MS April 1995 Radiation Hardened Triple Three-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 A2 3 B2 4 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3 Features • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 • Dose Rate Upset >1011 MEV-cm2 /mg RAD (Si)/s, 20ns Pulse -55oC +125oC • Latch-Up Free Under Any Conditions • Military Temperature Range: to C2 5 Y2 6 GND 7 • Significant Power Reduction Compared to ALSTTL Logic • DC Operating Voltage Range: 4.5V to 5.