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2N6978 - N-Channel IGBTs

General Description

The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers.

These types can be operated directly from low-power integrated circuits.

Key Features

  • 5A, 400V and 500V.
  • VCE(ON) 2V.
  • TFI 1µs, 0.5µs.
  • Low On-State Voltage.
  • Fast Switching Speeds.
  • High Input Impedance GATE.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
2N6975 N-Channel IGBTs
2N6976 N-Channel IGBTs
2N6977 N-Channel IGBTs
2N6796 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs Package JEDEC TO-204AA BOTTOM VIEW EMITTER COLLECTOR (FLANGE) April 1995 Features • 5A, 400V and 500V • VCE(ON) 2V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance GATE Applications • Power Supplies • Motor Drives • Protection Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G Description The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.