Datasheet4U Logo Datasheet4U.com

LL014N - IRLL014N

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP B O TT O M 8 www. irf. com Free Datasheet http://www.0PDF. com IRLL014N Tape & Reel Information SOT-223 Outline 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) TR 2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 ) 7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
LL024N IRLL024N

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 91499B IRLL014N HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.14Ω G S ID = 2.0A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
Published: |