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JANTXV2N6849 - P-Channel MOSFET

General Description

The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance.

Key Features

  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements.
  • ESD Rating: Class 1C per MIL-STD-750, Method 1020 They are well suited for.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANTXV2N6849U 100V P-CHANNEL MOSFET
JANTXV2N6845 POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
JANTXV2N6847 POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A)
JANTXV2N6800 POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A)
JANTXV2N6802 POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) PD-90550G IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849 100V, P-CHANNEL REF: MIL-PRF-19500/564 Product Summary Part Number BVDSS IRFF9130 -100V RDS(on) ID 0.30 -6.5A Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.