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JANTXV2N6756 - N-Channel Transistor

General Description

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

Key Features

  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements.
  • ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalan.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANTXV2N6758 N-CHANNEL TRANSISTORS
JANTXV2N6760 TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=1.00ohm/ Id=5.5A)
JANTXV2N6760 POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.00ohm/ Id=5.5A)
JANTXV2N6762 TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
JANTXV2N6762 POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF130 100V RDS(on) ID 0.18 14A PD- 90333G IRF130 JANTX2N6756 JANTXV2N6756 100V, N-CHANNEL REF: MIL-PRF-19500/542 Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.