Datasheet4U Logo Datasheet4U.com

JANTX2N6790 - N-Channel MOSFET

Description

The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance.

Features

  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements.
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
JANTX2N2060 UNITIZED DUAL NPN SILICON TRANSISTOR Microsemi
JANTX2N2060L UNITIZED DUAL NPN SILICON TRANSISTOR Microsemi
JANTX2N2221A NPN SILICON SWITCHING TRANSISTOR Microsemi
JANTX2N2222A NPN SILICON SWITCHING TRANSISTOR Microsemi Corporation
JANTX2N2323 SCRs 1.6 Amp/ Planear Microsemi Corporation

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANTX2N6792 POWER MOSFET N-CHANNEL
JANTX2N6794 POWER MOSFET N-CHANNEL
JANTX2N6794U Transistors
JANTX2N6796 POWER MOSFET
JANTX2N6798 POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF220 200V RDS(on) ID 0.80 3.5A PD-90427E IRFF220 JANTX2N6790 JANTXV2N6790 200V, N-CHANNEL REF: MIL-PRF-19500/555 Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.
Published: |