Datasheet Details
| Part number | JANTX2N6770 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 802.85 KB |
| Description | N-Channel Transistor |
| Datasheet |
 JANTX2N6770 Datasheet
|
|
|
General Description
HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.
Key Features
- Repetitive Avalanche Ratings.
- Dynamic dv/dt Rating.
- Hermetically Sealed.
- Simple Drive Requirements.
- ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalan.