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JANSR2N7666T1 - Radiation Hardened Power MOSFET

Datasheet Summary

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology.

Features

  • Single event effect (SEE) hardened (up to LET of 90.5 MeV.
  • cm2/mg).
  • Low RDS(on).
  • Improved SOA for linear mode operation.
  • Fast switching.
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • Light weight.
  • ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential.

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Full PDF Text Transcription

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IRHMS9A97260 (JANSR2N7666T1) PD-97991 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Technology Features • Single event effect (SEE) hardened (up to LET of 90.
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