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JANSG2N7697UFHC - Radiation Hardened GaN transistor

Description

IG1NT052N10R is part of the IR HiRel family of products.

IR HiRel radiation hardened GaN transistor technology provides high performance power devices for space applications.

These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE).

Features

  • Single event effect (SEE) hardened up to LET (GAN) 1 = 70 MeV. cm2/mg (Au ion).
  • Ultra low RDS(on).
  • Low total gate charge.
  • Zero reverse recovery charge.
  • Hermetically sealed ceramic package.
  • Surface mount.
  • Light weight.
  • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
  • VDS max: 100V.
  • ID: 52A.
  • RDS(on) max : 6.0m.
  • QG max: 13nC.
  • Size: 7.1mm x 5.3mm.
  • REF: MIL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) 100V, 52A, N-channel, Enhancement mode PD-98011B Features • Single event effect (SEE) hardened up to LET (GAN) 1 = 70 MeV.cm2/mg (Au ion) • Ultra low RDS(on) • Low total gate charge • Zero reverse recovery charge • Hermetically sealed ceramic package • Surface mount • Light weight • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary • VDS max: 100V • ID: 52A • RDS(on) max : 6.0m • QG max: 13nC • Size: 7.1mm x 5.
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