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IRSF3010 - FULLY PROTECTED POWER MOSFET SWITCH

General Description

The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short circuit, over-temperature, ESD and over-voltage protections.

Key Features

  • n Extremely Rugged for Harsh Operating Environments n Over Temperature Protection n Over Current Protection n Active Drain to Source Clamp n ESD Protection n Compatible with standard POWER MOSFET n Low Operating Input Current n Monolithic Construction n Dual set/reset Threshold Input.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Provisional Data Sheet No.PD-6.0027A IRSF3010 FULLY PROTECTED POWER MOSFET SWITCH General Description: The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short circuit, over-temperature, ESD and over-voltage protections. The on chip protection circuit latches off the POWER MOSFET in case the drain current exceeds 14A (typical) or the junction temperature exceeds 165°C (typical) and keeps it off until the input is driven low. The drain to source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn off with inductive loads. The input current requirements are very low (300uA) which makes the IRSF3010 compatible with most existing designs based on standard POWER MOSFETs.