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IRS2609DSPBF - High Speed Power MOSFET And IGBT Driver

Description

The IRS2609D is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features

  • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage.
  • dV/dt immune www. DataSheet4U. com.
  • Gate drive supply range from 10 V to 20 V.
  • Undervoltage lockout for both channels.
  • 3.3 V, 5 V and 15 V input logic compatible.
  • Cross-conduction prevention logic.
  • Matched propagation delay for both channels.
  • High side output in phase with IN input.
  • Internal 530 ns dead-time.

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Full PDF Text Transcription

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June 18, 2008 IRS2609DSPbF HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune www.DataSheet4U.com • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • 3.3 V, 5 V and 15 V input logic compatible • Cross-conduction prevention logic • Matched propagation delay for both channels • High side output in phase with IN input • Internal 530 ns dead-time • Lower di/dt gate driver for better noise immunity • Shut down input turns off both channels • Integrated bootstrap diode • RoHS compliant • Packages 8-Lead SOIC Product Summary VOFFSET IO+/VOUT ton/off (typ.) Dead Time 600 V max.
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