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IRLU3717PBF - HEXFET Power MOSFET

Download the IRLU3717PBF datasheet PDF. This datasheet also covers the IRLR3717PBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold vo.

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Note: The manufacturer provides a single datasheet file (IRLR3717PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3717 HEXFET Power MOSFET
IRLU3714 SMPS MOSFET
IRLU3714PbF SMPS MOSFET
IRLU3714ZPBF HEXFET Power MOSFET
IRLU3715 SMPS MOSFET

Full PDF Text Transcription

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PD - 95776A IRLR3717PbF IRLU3717PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max 20V 4.0m: Qg 21nC D-Pak IRLR3717 I-Pak IRLU3717 www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 120 81 Units V A ™ f f 460 89 44 0.
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