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IRLU3715ZCPBF - HEXFET Power MOSFET

Download the IRLU3715ZCPBF datasheet PDF. This datasheet also covers the IRLR3715ZCPBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3715ZCPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3715Z HEXFET Power MOSFET
IRLU3715ZPBF HEXFET Power MOSFET
IRLU3715 SMPS MOSFET
IRLU3715PBF SMPS MOSFET
IRLU3714 SMPS MOSFET

Full PDF Text Transcription

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PD - 96053 IRLR3715ZCPbF IRLU3715ZCPbF Applications l l HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free VDSS RDS(on) max 20V 11m: Qg 7.2nC Benefits l l Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRLR3715ZCPbF I-Pak IRLU3715ZCPbF www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 49 35 Units V A ™ f f 200 40 20 0.
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