Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- 0.46 (.018)
4
1.02 (.040) 1.64 (.025)
123
6.22 (.245) 5.97 (.235)
10.42 (.410) 9.40 (.370)
1.52 (.060) 1.15 (.045)
2X
1.14 (.045) 0.76 (.030)
-B -
3X
0.89 0.64
(.035) (.025)
0.25 (.010)
M AMB
6.45 (.245) 5.68 (.224)
0.51 (.020) M IN. 0.58 (.023) 0.46 (.018)
LE A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN
2.28 (.090)
4.57 (.180)
NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C.