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IRLR8721PBF - HEXFET Power MOSFET

Download the IRLR8721PBF datasheet PDF. This datasheet also covers the IRLU8721PBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • expanded and approximated by; ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
  • dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎛ Qgs 2 ⎞ f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLU8721PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLR8721PBF-1 POWER MOSFET
IRLR8726 Power MOSFET
IRLR8726PBF Power MOSFET
IRLR8729PBF Power MOSFET
IRLR8729PBF-1 POWER MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET Power MOSFET IRLR8721PbF IRLU8721PbF ® 8.4m: PD - 96119 VDSS RDS(on) max 30V D Qg 8.5nC S G S D G D-Pak I-Pak IRLR8721PbF IRLU8721PbF G Gate D Drain S Source Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
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