Datasheet4U Logo Datasheet4U.com

IRLR3717 - HEXFET Power MOSFET

Features

  • anded and approximated by; ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
  • dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-sou.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR3717 N-Channel MOSFET INCHANGE
IRLR3715Z N-Channel MOSFET INCHANGE
IRLR3705Z N-Channel MOSFET INCHANGE
IRLR3103 N-Channel MOSFET INCHANGE
IRLR3105 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLR3717PBF HEXFET Power MOSFET
IRLR3714 SMPS MOSFET
IRLR3714PbF SMPS MOSFET
IRLR3714ZPBF HEXFET Power MOSFET
IRLR3715 SMPS MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 94718B IRLR3717 IRLU3717 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max 20V 4.0m: Qg 21nC D-Pak IRLR3717 I-Pak IRLU3717 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 120 81 Units V A ™ f f 460 89 44 0.
Published: |