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IRLMS6802PBF - HEXFET Power MOSFET

Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLMS6802 HEXFET Power MOSFET
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Full PDF Text Transcription

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PD- 94897 IRLMS6802PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free D D 1 6 A D VDSS = -20V RDS(on) = 0.050Ω 2 5 D G 3 4 S Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium.
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