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IRLMS5703 - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

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Full PDF Text Transcription

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PD - 91413E IRLMS5703 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET D 1 6 A D VDSS = -30V RDS(on) = 0.20Ω D 2 5 D G 3 4 S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23.
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