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IRLMS2002PbF - HEXFET Power MOSFET

Description

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

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IRLMS2002 HEXFET Power MOSFET
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Full PDF Text Transcription

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PD- 95675 IRLMS2002PbF l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l 2.5V Rated l Lead-Free D D G Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
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