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IRLM120A - HEXFET Power MOSFET

Key Features

  • n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ. ) IRLM120A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ.) IRLM120A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A SOT-223 2 1 3 1. Gate 2. Drain 3.