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IRLL3303PBF - POWER MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • XX FL014 314P A = ASS EMBLY SITE DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES.

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Other Datasheets by International Rectifier (now Infineon)

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IRLL3303 HEXFET Power MOSFET
IRLL014 Power MOSFET
IRLL014N HEXFET Power MOSFET
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IRLL014PBF POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 95223 IRLL3303PbF Surface Mount l Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 30V G S RDS(on) = 0.031Ω ID = 4.6A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.