Datasheet4U Logo Datasheet4U.com

IRLL2703 - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.7 2 4 ) M AX . 4 WORLD.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLL014 Power MOSFET Vishay
IRLL014NTRPBF N-Channel MOSFET VBsemi
IRLL110 Power MOSFET Vishay
IRL1004 N-Channel MOSFET INCHANGE
IRL1004S N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLL2703PBF POWER MOSFET
IRLL2705 HEXFET Power MOSFET
IRLL2705PBF POWER MOSFET
IRLL014 Power MOSFET
IRLL014N HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 91894 IRLL2703 HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.045Ω G S ID = 3.9A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
Published: |