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PD - 97489
IRLH5034PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 4.5V)
40 3.2 43 1.2 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
• • • •
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Note
Features and Benefits
Features Low RDSon (≤3.2mΩ @ Vgs = 4.5V ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.