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IRLF230 - N-CHANNEL TRANSISTORS

Features

  • n Dynamic dv/dt Rating n Logic Level Gate Drive n RDS(on) Specific at VGS = 4V & 5V n 150°C Operating Temperature n Fast Switching n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current  PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery dv/dt.
  • TJ TSTG Operating Junction Storage Temper.

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Provisional Data Sheet No. PD-9.1614 HEXFET® TRANSISTOR IRLF230 N-CHANNEL 200Volt, 0.40 Ω, HEXFET The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-tosource voltage of 5V. In addition to the well established characteristics of HEXFETs, they have the added advantage of providing low drive requirements to interface power loads to logic level IC’s and microprocessors. Fields of application include: high speed power applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers. The HEXFET technology is the key to International Rectifier’s advance line of logic level power MOSFET transistors.
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