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IRLBD59N04E - HEXFET Power MOSFET

General Description

The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes.

Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes.

Key Features

  • 1 - ANODE - D - DRAIN - T2 -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -93910 www.datasheet4u.com IRLBD59N04E HEXFET® Power MOSFET VDSS = 40V RDS(on) = 0.018Ω ID = 59A† l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected Description The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes. The IRLBD59N04E provides cost effective temperature sensing for system protection along with the quality and ruggedness you expect from a HEXFET power MOSFET.