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PD-94192D
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRL7Y1905C BVDSS
IRL7Y1905C 50V, N-CHANNEL
50V
RDS(on) 0.11Ω
ID 10A
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.