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IRL5Y7413CM - N-CHANNEL POWER MOSFET

Features

  • n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Units 18.
  • 18.
  • A 72 75 W 0.6 W/°C VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage ±16 V Single Pulse A.

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Full PDF Text Transcription

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PD - 94164A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number IRL5Y7413CM BVDSS 30V RDS(on) ID 0.025Ω 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
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