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IRIS-G6623 - INTEGRATED SWITCHER

General Description

120±15% 100 1 .3Ω IRIS-G6623 450 Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed.

Key Features

  • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology.
  • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
  • Low start-up circuit current (100uA max).
  • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load.
  • Avalanche energy guaranteed MOSFET with high VDSS.
  • The built-in power MOSFET simplifies the surge absorpt.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Data Sheet No. PD 96947A IRIS-G6623 Features • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (100uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required.