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IRHY93130CM - RADIATION HARDENED POWER MOSFET THRU-HOLE

Key Features

  • n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Ava.

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IRHY93230CM RADIATION HARDENED POWER MOSFET THRU-HOLE
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IRHY9230CM RADIATION HARDENED POWER MOSFET THRU-HOLE
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www.DataSheet4U.com PD - 91400C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level IRHY9130CM 100K Rads (Si) IRHY93130CM 300K Rads (Si) RDS(on) 0.30 Ω 0.30 Ω ID -11A -11A IRHY9130CM JANSR2N7382 100V, P-CHANNEL REF: MIL-PRF-19500/615 ® RAD Hard HEXFET TECHNOLOGY ™ QPL Part Number JANSR2N7382 JANSF2N7382 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).