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IRHY8230CM - RADIATION HARDENED POWER MOSFET THRU-HOLE

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHY8130CM RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHY3130CM RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHY3230CM RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHY4130CM RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHY4230CM RADIATION HARDENED POWER MOSFET THRU-HOLE

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www.DataSheet4U.com PD - 91273C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.40Ω 0.40Ω 0.40Ω 0.40Ω IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614 RAD-Hard HEXFET TECHNOLOGY ™ ® ID QPL Part Number 9.4A JANSR2N7381 9.4A JANSF227381 9.4A JANSG2N7381 9.4A JANSH2N7381 TO-257AA International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).