Datasheet4U Logo Datasheet4U.com

IRHNJC9A3130 - N-CHANNEL POWER MOSFET

Download the IRHNJC9A3130 datasheet PDF. This datasheet also covers the IRHNJC9A7130 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).

Features

  • Low RDS(on).
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Ceramic package.
  • Light Weight.
  • Surface Mount.
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 12V, TC = 25°C ID2 @ VGS = 12V, TC = 100°C IDM @TC = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHNJC9A7130-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRH-12-12.5-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-24-6.3-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-5-30-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH3 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN
IRH310 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHNJC9A7130 N-CHANNEL POWER MOSFET
IRHNJ3130 N-CHANNEL MOSFET
IRHNJ4130 N-CHANNEL MOSFET
IRHNJ53034 RADIATION HARDENED POWER MOSFET
IRHNJ53130 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription

Click to expand full text
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) (Ceramic Lid) PD-97911 IRHNJC9A7130 JANSR2N7648U3C 100V, N-CHANNEL R 9 REF: MIL-PRF-19500/775 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJC9A7130 100 kRads (Si) IRHNJC9A3130 300 kRads (Si) RDS(on) 34m 34m ID QPL Part Number 35A JANSR2N7648U3C 35A JANSF2N7648U3C SMD-0.5 (Ceramic Lid) Description IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Published: |