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IRHNJ8130 - N-CHANNEL MOSFET

Download the IRHNJ8130 datasheet PDF. This datasheet also covers the IRHNJ3130 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHNJ3130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRH-12-12.5-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-24-6.3-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-5-30-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH3 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN
IRH310 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHNJ3130 N-CHANNEL MOSFET
IRHNJ4130 N-CHANNEL MOSFET
IRHNJ53034 RADIATION HARDENED POWER MOSFET
IRHNJ53130 RADIATION HARDENED POWER MOSFET
IRHNJ53230 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 93820 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) RDS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω ID 14.4A 14.4A 14.4A 14.4A IRHNJ7130 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® SMD-0.5 International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).